1. Advantages of Silicon Capacitors
Ultra-Thin : Silicon capacitors are next-generation capacitors that leverage semiconductor technology to finely etch silicon and increase surface area, achieving high-capacitance while maintaining an extremely thin profile. This thin profile technology provides an optimal design flexibility even in environments with severe space and height constraints, such as inside the embedded substrate or within package modules.
Low Parasitic Inductance (Low ESL) : The "parasitic inductance", which causes noise or delay in circuits is extremely low, at under 1pH. Parasitic inductance is the noise generated when current flows sharply. It often degrades the performance of high-frequency circuits. With Low ESL characteristics, Silicon Capacitors reduce noise and deliver signals accurately and rapidly—especially in high-speed communication environments such as AI servers and autonomous driving.
High Reliability / High-Temperature Stability : They offer a stable performance even under extreme environments of 250℃ or higher. Since capacitance change is minimal even in high-heat AI servers and harsh-condition aerospace and automotives, they can be applied with confidence.
2. Application of Silicon Capacitors
They are mainly used in the fields below, that require ultra-thinness, high performance and high-reliability: AI servers, autonomous driving, and optical communications.
Samsung Electro-Mechanics is currently mass-producing 4 types of products optimized for high-performance semiconductor packages and AI servers. We also hold a total lineup of 9 variants, including 5 lineups of promotional samples.
Product Lineup
| Part Number | Status | Features | LW (mm) |
Thickness | Capacitance | Power Rails |
Rated Voltage |
Breakdown Voltage |
Package | Pad Size |
|---|---|---|---|---|---|---|---|---|---|---|
| SCBCAP305L95EGNNWT | Sample available | DC decoupling | 1.26x1.03 | 68um | 3000nF | 4 | 1.2V | 3.7V | LSC | 60um |
| SCBCAP105L95AGNNNT | Sample available | DC decoupling | 1.26x1.03 | 68um | 1000nF | 4 | 1.35V | 4V | LSC | 60um |
| SCBCAP514L95AGNNNT | MP | DC decoupling | 1.26x1.03 | 70um | 512nF | 4 | 1.35V | 4V | LSC | 60um |
| SCBC5P254L95AGNNNT | MP | DC decoupling | 1.26x0.51 | 70um | 256nF | 2 | 1.35V | 4V | LSC | 60um |
| SCG98P105M86AGNNWT | MP | DC decoupling | 0.96x0.88 | 60um | 1050nF | 2 | 1.35V | 4V | LSC | 55um |
| SCHVSP107MH1AGB9WT | MP | DC decoupling | 11.01x8.35 | 750um | 103950nF | 198 | 1.35V | 4V | DSC | 55um |
| SCRLLC885MG5EGNNWT | Sample available | DC decoupling | 2.00x2.00 | 738um | 8800nF | 2 | 1.2V | 4V | Embedded | 200um |
| SCRNKC166MG5EGNNWT | Sample available | DC decoupling | 4.06x2.00 | 738um | 17600nF | 4 | 1.2V | 4V | Embedded | 200um |
| SCRNNC326MG5EGNNWT | Sample available | DC decoupling | 4.02x4.02 | 738um | 35000nF | 4 | 1.2V | 4V | Embedded | 200um |
Please click here for sample requests or any other inquiries.
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